Bootstrap Capacitor Defined:
A N-MOSFET/IGBT needs a significantly positive charge (VGS > Vth) applied to the gate in order to turn on. Using only N-channel MOSFET/IGBT devices is a common cost reduction method due largely to die size reduction (there are other benefits as well). However, using nMOS devices means that a voltage higher than the power rail supply (V+) is needed in order to saturate the transistor and thus avoid significant heat loss.
A bootstrap capacitor is connected from the supply rail (V+) to the output voltage. If the capacitor is polarized then the orientation of the capacitor is as follows: Anode(marked with ‘+’)→(V+) and Cathode (marked with ‘-’)→Output. In other words, the capacitor should be between the output (source of an N-MOSFET) and (V+). Usually the source terminal of the N-MOSFET is connected to the cathode of a recirculation diode allowing for efficient management of stored energy in the typically inductive load (See Flyback diode). Due to the charge storage characteristics of a capacitor, the bootstrap voltage will rise above (V+) providing the needed gate drive voltage.
A bootstrap capacitor is connected from the supply rail (V+) to the output voltage. If the capacitor is polarized then the orientation of the capacitor is as follows: Anode(marked with ‘+’)→(V+) and Cathode (marked with ‘-’)→Output. In other words, the capacitor should be between the output (source of an N-MOSFET) and (V+). Usually the source terminal of the N-MOSFET is connected to the cathode of a recirculation diode allowing for efficient management of stored energy in the typically inductive load (See Flyback diode). Due to the charge storage characteristics of a capacitor, the bootstrap voltage will rise above (V+) providing the needed gate drive voltage.
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